Regensburg 2016 – scientific programme

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DS: Fachverband Dünne Schichten

DS 36: Focussed Session: Semiconductor Heteroepitaxy on Nanopatterned Substrates
(Joint session of DS and HL, organized by DS)

DS 36.3: Topical Talk

Wednesday, March 9, 2016, 16:00–16:30, H11

Local Heteroepitaxy for Large-Scale Integration — •Heinz Schmid, Mattias Borg, Davide Cutaia, Kirsten Moselund, Moritz Knoedler, Nicolas Bologna, and Heike Riel — IBM Research - Zurich , 8803 Rueschlikon, Switzerland

The cooperative use of unequal materials like silicon and III-Vs can lead to performance benefits and even enable novel devices and applications. Traditionally this has been achieved by clever joining of the individual Si and III-V components in a common package. Alternatively this could be achieved by building the devices directly from Si wafers with embedded III-V layers. However, such wafers are not readily available yet. Here we review our effort on local epitaxy of III-Vs on Si and introduce the concept of template-assisted selective epitaxy (TASE). Various III-V materials with nanowire or thin-film geometries were successfully grown with high yield on Si using TASE and further processed into field effect transistors (FETs) and tunnel-FETs that exhibited excellent performance.