Regensburg 2016 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 36: Focussed Session: Semiconductor Heteroepitaxy on Nanopatterned Substrates
(Joint session of DS and HL, organized by DS)
DS 36.4: Topical Talk
Mittwoch, 9. März 2016, 16:45–17:15, H11
Fabrication and study of metal contacts on germanium nanowires using electrical biasing in a transmission electron microscope — •Martien den-Hertog1, Khalil El-Hajroui1, Clemens Zeiner3, Alois Lugstein3, Eric Robin2, Miguel Lopez-Haro2, and Jean-Luc Rouviere2 — 1Institut Neel, CNRS/UJF/UGA, Grenoble, France — 2INAC, CEA-Grenoble/UGA, Grenoble, France — 3Institute for solid state electronics, Vienna, Autriche
Semiconductor nanowires (NWs) are promising candidates for many device applications ranging from electronics and optoelectronics to energy conversion and spintronics. To allow successful device integration the contact quality between for example a NW and metal is of paramount importance. An interesting approach to create an atomically abrupt contact with low electrical resistance on NWs of group IV (silicon and germanium) is to create a metal-semiconductor phase in the extremities of the NW. To understand and control the metal diffusion into the NW that creates a metallic phase, detailed characterization at atomic length scales is necessary to understand how the metal atoms diffuse and incorporate into the formed phase at the reaction front and how these parameters relate to the electrical properties of the same interface. In this work we study two different kind of semiconducting NW devices fabricated on electron transparent Si3N4 membranes. We show in-situ phase propagation of a metal-semiconductor phase of Cu and Al in Ge NWs in the TEM while measuring the current through the device, and analyze the metal diffusion process.