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DS: Fachverband Dünne Schichten

DS 36: Focussed Session: Semiconductor Heteroepitaxy on Nanopatterned Substrates
(Joint session of DS and HL, organized by DS)

DS 36.5: Topical Talk

Mittwoch, 9. März 2016, 17:15–17:45, H11

Cubic GaN on pre-patterned 3C-SiC/Si (001) substrates — •Donat Josef As, Ricarda Maria Kemper, Thomas Riedl, and Jörg K.N. Lindner — Department Physik, Universität Paderborn, Warburgerstrasse 100, 33098 Paderborn, Germany

The influence of growth area reduction towards length scales predicted to be effective for defect reduction by the theory of nano-hetero-epitaxy (NHE) is analyzed. This is studied in detail for the first time in the system of meta-stable cubic GaN (c-GaN) grown by plasma-assisted molecular beam epitaxy on pre-patterned 3C-SiC/Si (001) substrates. It is demonstrated that regardless of the pattern symmetry or size, the cubic phase of GaN nucleates on top of all investigated mesa structures. Electron beam lithography followed by a lift-off and a reactive ion etching process is used for tailoring post-shaped SiC structures. A successful reduction of the {111} stacking fault (SF) density is achieved by reducing the (001) top edge length of the posts from ~500 nm down to ~20 nm. Transmission electron microscopy reveals a nucleation of phase-pure and almost defect free c-GaN on top of the smallest SiC nanostructures as predicted by theoretical calculations.