Regensburg 2016 – scientific programme

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DS: Fachverband Dünne Schichten

DS 37: Frontiers of Electronic Structure Theory: Focus on Topology and Transport III
(Joint session of DS and O, organized by O)

DS 37.5: Talk

Wednesday, March 9, 2016, 16:30–16:45, H24

New electron states at the Bi/InAs(111) interface — •L Nicolaï^1,2,3, K Hricovini^2,3, J-M Mariot⁴, M C Richter^2,3, O Heckmann^2,3, U Djukic², T Balasubramanian⁵, M Leandersson⁵, J Sadowski⁵, J Denlinger⁶, I Vobornik⁷, J Braun⁷, H Ebert⁷, and J Minár^7,8 — ¹LMU, Munich — ²LPMS, UCP, Cergy, France — ³DSM-IRAMIS, Spec, Cea-Saclay, France — ⁴LCP-MR, UPMC Univ. Paris 06/CNRS, France — ⁵MAX-lab, Lund Univ., Sweden — ⁶ALS, Berkeley, USA — ⁷EST, Trieste, Italy — ⁸Univ. of West Bohemia, Plzeň, Czech Republic

The Bi(111) surface is a prototype system that shows Rashba-split surface states. Theoretical studies [1] predicted non-trivial topological surface states appearing on a single bi-layer of Bi(111) and a more complex behavior was suggested for a variable film thickness as a function of the layer thickness [2]. This clearly indicates that the electronic properties of thin films of this material are quite complex and far from being fully understood. Here we present combined theoretical and ARPES studies on the electronic structure of Bi(111) films grown on InAs(111). Bi grows epitaxially on this substrate and a monocrystal of very high quality is obtained after depositing several monolayers. ARPES experiments on the samples prepared show several new electronic states not reported before. The one-step model of photoemission as implemented in the SPR-KKR package [3] allows us to identify pristine Bi bulk states coexisting with InBi surface states.[1] M. Wada et al., Phys. Rev. B 83, 121310 (2011). [2] Z. Liu et al., Phys. Rev. Lett. 107, 136805 (2011). [3] J. Braun, Rep. Prog. Phys. 59, 1267-1338 (1996).