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DS: Fachverband Dünne Schichten
DS 38: Topological Insulators
(Joint session of DS, HL, MA, O and TT, organized by MA)
DS 38.9: Vortrag
Mittwoch, 9. März 2016, 17:15–17:30, H32
Towards topological tunnel devices - A versatile method for processing tunnel junctions from high quality single crystals — •Robin Klett1,2, Karsten Rott1,2, Daniel Ebke3, Chandra Shekhar3, Joachim Schönle4, Wolfgang Wernsdorfer4, Stuart Parkin5, Claudia Felser1,2, and Günter Reiss1,2 — 1Physics Department, Bielefeld University, Germany — 2Center for Spinelectronic Materials and Devices, Universitätsstraße 25, 33605 Bielefeld, Germany — 3Max-Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany — 4CNRS, Institut NEEL and Univ. Grenoble Alpes, F-38000 Grenoble, France — 5Max Planck Institute for Microstructure Physics, 06120 Halle/Saale, Germany
We present a new and versatile concept for devices based on topological materials. To maintain their topological character high quality samples with clean interfaces to adjacent functional device components are mandatory. This requirement forms a bottleneck of current research, because very often the established thin film deposition fails to produce such high quality samples and bare surfaces of single crystals lack the necessary flatness. We demonstrate a novel, all-in-ultrahigh-vacuum process that enables to realize, e.g. tunnel junctions, Andreev contacts or SQUID rings from single crystalline bulk material. The validity of the technique is verified and illustrated with tunnel junctions made from cleaved single crystals of the half-Heusler topological superconductor candidate YPtBi.