DS 39: Resistive Effects I
Donnerstag, 10. März 2016, 09:30–11:00, H8
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09:30 |
DS 39.1 |
Investigation of oxygen vacancy formation and migration in HfO2 from density functional theory — •Marta Gibertini, Daniel Wortmann, Gustav Bihlmayer, and Stefan Blügel
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09:45 |
DS 39.2 |
Impact of Cation-Stoichiometry on Switching Speed and Data Retention in SrTiO3 Thin Film Devices — •Nicolas Raab, Christoph Bäumer, Karsten Fleck, Stephan Menzel, and Regina Dittmann
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10:00 |
DS 39.3 |
Resistive switching devices with ultrathin graphene top electrodes for in situ spectromicroscopic characterization — •Richard Valenta, Christoph Bäumer, Christoph Schmitz, David Müller, Nicolas Raab, Slavomir Nemsak, Claus Michael Schneider, Rainer Waser, and Regina Dittmann
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10:15 |
DS 39.4 |
Energy-efficient and fast BiFeO3-based artificial synapses with a time window of 25ms to 125μs — •Nan Du, Tiangui You, Mahdi Kiani, Christian Mayr, Danilo Bürger, Ilona Skorupa, Oliver G. Schmidt, and Heidemarie Schmidt
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10:30 |
DS 39.5 |
Influence of Stack Order on the Forming and Switching Behavior of HfO2/TiO2 Bilayer Cells for ReRAM Applications — •Alexander Hardtdegen, Hehe Zhang, and Susanne Hoffmann-Eifert
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10:45 |
DS 39.6 |
Hanle magnetoresistance in thin metal films with strong spin-orbit coupling — Saül Vélez, •Vitaly Golovach, Amilcar Bedoya-Pinto, Miren Isasa, Edurne Sagasta, Mikel Abadia, Celia Rogero, Luis Hueso, Sebastian Bergeret, and Fèlix Casanova
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