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Regensburg 2016 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 39: Resistive Effects I

DS 39.3: Vortrag

Donnerstag, 10. März 2016, 10:00–10:15, H8

Resistive switching devices with ultrathin graphene top electrodes for in situ spectromicroscopic characterization — •Richard Valenta, Christoph Bäumer, Christoph Schmitz, David Müller, Nicolas Raab, Slavomir Nemsak, Claus Michael Schneider, Rainer Waser, and Regina Dittmann — Peter Grünberg Institut and JARA-Fit, Forschungszentrum Jülich, 52425 Jülich

Resistively switching transition metal oxides are gaining in importance as a promising alternative for future non-volatile memory. Although the switching mechanism is not fully understood, it has been shown that nanoscale redox reactions are responsible for a localized change of the resistance. Spectromicroscopic measurements present a powerful tool to investigate such localized chemical and structural changes and can give a deeper understanding of the switching mechanism.

Here we will present local changes in the electronic structure of SrTiO3-based memristive devices in two different resistance states, utilizing in-operando photoemission electron microscopy measurements (PEEM). Since PEEM is very surface sensitive, ultrathin graphene top electrodes are used to attain spectroscopic information from the active SrTiO3 layer of a functioning device. Localized changes of the work function as well as changes in the O K-edge spectra indicate that the resistance change coincides with redox reactions within confined switching filaments. This finding substantiates the expected filamentary switching of SrTiO3 and confirms that the resistance change is caused by oxygen migration.

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