Regensburg 2016 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 39: Resistive Effects I
DS 39.4: Vortrag
Donnerstag, 10. März 2016, 10:15–10:30, H8
Energy-efficient and fast BiFeO3-based artificial synapses with a time window of 25ms to 125μs — •Nan Du1, Tiangui You1, Mahdi Kiani1, Christian Mayr2, Danilo Bürger1, Ilona Skorupa1,3, Oliver G. Schmidt1,4, and Heidemarie Schmidt1 — 1Faculty of Electrical and Information Engineering, TU Chemnitz — 2Faculty of Electrical Engineering and Information Technology, TU Dresden — 3Institute of Ion Beam Physics and Materials Research, HZDR — 4Institute for Integrative Nanosciences, IFW Dresden
Memristive devices can be used to emulate spike-driven synaptic plasticity (STDP) by applying specific voltage waveforms at their two terminals. In this work, we investigate STDP [1] with a simplified single pairing of one presynaptic voltage spike and one postsynaptic voltage spike in a BiFeO3 (BFO)-based memristive device [2-4]. We show that the analog resistive switching of BFO memristors allows to shorten the learning time constant of the STDP function to 125 μs. As the power consumption is a major constraint in neuromorphic circuits, the energy-efficient setting process has also be demonstrated for BFO-based artificial synapse with short and simplified spike sequences (4.5 pJ). [1] C. Mayr, P. Stärke, J. Partzsch, L. Cederstroem, R. Schüffny, Y. Shuai, N. Du, H. Schmidt, Adv. Neural Inf. Process. Syst. 25, 1700-1708 (2012).[2] Y. Shuai et.al., IEEE Elec. Dev. Lett. 34, 54-56 (2013). [3] N. Du et. al., Front. Neurosci. 9, 227 (2015). [4] T. You, Y. Shuai, W. Luo, N. Du, D. Bürger, I. Skorupa, R. Hübner, S. Henker, C. Mayr, R. Schüffny, T. Mikolajick, O. G. Schmidt, H. Schmidt, Adv. Funct. Mater. 24, 3357-3365(2014)