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Regensburg 2016 – scientific programme

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DS: Fachverband Dünne Schichten

DS 3: Phase Change / Resistive Switching

Monday, March 7, 2016, 09:30–13:15, H8

09:30 DS 3.1 MemFlash: Memristive operation mode of floating gate transistors — •Henning Winterfeld, Nico Himmel, Martin Ziegler, Henning Hanssen, Detlef Friedrich, Wolfgang Benecke, and Hermann Kohlstedt
09:45 DS 3.2 Memristive Functionality of a SONOS Memory Transistor — •Nico Himmel, Hannes Mähne, Steffen Thiem, Henning Winterfeld, Martin Ziegler, and Hermann Kohlstedt
10:00 DS 3.3 Memristive circuits for the emulation of neuronal dynamics — •Marina Ignatov, Martin Ziegler, Mirko Hansen, Adrian Petraru, and Hermann Kohlstedt
10:15 DS 3.4 Memristive Devices for Neuromorphic Systems — •Mirko Hansen, Martin Ziegler, Finn Zahari, Lukas Kolberg, Sven Dirkmann, Thomas Mussenbrock, and Hermann Kohlstedt
  10:30 DS 3.5 The contribution has been withdrawn.
10:45 DS 3.6 Resistive switching in oxygen engineered TaOx and Ta:HfOx based RRAM devices grown by MBE — •Merin Jissy Joseph, S.U. Sharath, Stefan Vogel, Erwin Hildebrandt, Philipp Komissinskiy, Thomas Schroeder, and Lambert Alff
  11:00 DS 3.7 The contribution has been withdrawn.
  11:15 15 min. break.
11:30 DS 3.8 Resistive switching in oxygen engineered Al2O3/HfOx based RRAM devices grown by MBE — •Stefan Vogel, S. U. Sharath, Erwin Hildebrandt, Jonas Hunka, Christian Wenger, Thomas Schroeder, and Lambert Alff
11:45 DS 3.9 Non-volatile capacitive switching of BiFeO3-coated Si3N4 /Ge/Si structures — •Kefeng Li, Lars Rebohle, Nan Du, Tiangui You, Slawek Prucnal, Ilona Skorupa, Danilo Bürger, Thomas Schröder, Oliver G. Schmidt, and Heidemarie Schmidt
12:00 DS 3.10 Structural characterization of epitaxial trigonal Ge-Sb-Te grown by MOVPE — •Martin Schuck, Sally Rieß, Hongchu Du, Manuel Bornhöfft, Gregor Mussler, Martina von der Ahe, Alexander Schwedt, Joachim Mayer, Hilde Hardtdegen, and Detlev Grützmacher
12:15 DS 3.11 Metalorganic vapour phase deposition of indium-antimony-tellurium nanostructures — •Kristof Keller, Martin Schuck, Martina von der Ahe, Gregor Mussler, Hilde Hardtdegen, and Detlev Grützmacher
12:30 DS 3.12 Phase transformation in epitaxial GST thin films grown on Si (111) by Pulsed Laser Deposition — •Isom Hilmi, Andriy Lotnyk, Erik Thelander, Jürgen W. Gerlach, Philipp Schumacher, and Bernd Rauschenbach
12:45 DS 3.13 Ab initio Simulations of Liquid Phase-Change Materials — •Mathias Schumacher, Hans Weber, Ivan Kaban, Riccardo Mazzarello, and Pal Jovari
13:00 DS 3.14 Dielectric properties and AC conductivity of amorphous phase change materials — •chao chen, hanno volker, peter jost, marvin kaminski, and matthias wuttig
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