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09:30 |
DS 3.1 |
MemFlash: Memristive operation mode of floating gate transistors — •Henning Winterfeld, Nico Himmel, Martin Ziegler, Henning Hanssen, Detlef Friedrich, Wolfgang Benecke, and Hermann Kohlstedt
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09:45 |
DS 3.2 |
Memristive Functionality of a SONOS Memory Transistor — •Nico Himmel, Hannes Mähne, Steffen Thiem, Henning Winterfeld, Martin Ziegler, and Hermann Kohlstedt
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10:00 |
DS 3.3 |
Memristive circuits for the emulation of neuronal dynamics — •Marina Ignatov, Martin Ziegler, Mirko Hansen, Adrian Petraru, and Hermann Kohlstedt
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10:15 |
DS 3.4 |
Memristive Devices for Neuromorphic Systems — •Mirko Hansen, Martin Ziegler, Finn Zahari, Lukas Kolberg, Sven Dirkmann, Thomas Mussenbrock, and Hermann Kohlstedt
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10:30 |
DS 3.5 |
The contribution has been withdrawn.
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10:45 |
DS 3.6 |
Resistive switching in oxygen engineered TaOx and Ta:HfOx based RRAM devices grown by MBE — •Merin Jissy Joseph, S.U. Sharath, Stefan Vogel, Erwin Hildebrandt, Philipp Komissinskiy, Thomas Schroeder, and Lambert Alff
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11:00 |
DS 3.7 |
The contribution has been withdrawn.
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11:15 |
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15 min. break.
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11:30 |
DS 3.8 |
Resistive switching in oxygen engineered Al2O3/HfOx based RRAM devices grown by MBE — •Stefan Vogel, S. U. Sharath, Erwin Hildebrandt, Jonas Hunka, Christian Wenger, Thomas Schroeder, and Lambert Alff
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11:45 |
DS 3.9 |
Non-volatile capacitive switching of BiFeO3-coated Si3N4 /Ge/Si structures — •Kefeng Li, Lars Rebohle, Nan Du, Tiangui You, Slawek Prucnal, Ilona Skorupa, Danilo Bürger, Thomas Schröder, Oliver G. Schmidt, and Heidemarie Schmidt
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12:00 |
DS 3.10 |
Structural characterization of epitaxial trigonal Ge-Sb-Te grown by MOVPE — •Martin Schuck, Sally Rieß, Hongchu Du, Manuel Bornhöfft, Gregor Mussler, Martina von der Ahe, Alexander Schwedt, Joachim Mayer, Hilde Hardtdegen, and Detlev Grützmacher
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12:15 |
DS 3.11 |
Metalorganic vapour phase deposition of indium-antimony-tellurium nanostructures — •Kristof Keller, Martin Schuck, Martina von der Ahe, Gregor Mussler, Hilde Hardtdegen, and Detlev Grützmacher
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12:30 |
DS 3.12 |
Phase transformation in epitaxial GST thin films grown on Si (111) by Pulsed Laser Deposition — •Isom Hilmi, Andriy Lotnyk, Erik Thelander, Jürgen W. Gerlach, Philipp Schumacher, and Bernd Rauschenbach
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12:45 |
DS 3.13 |
Ab initio Simulations of Liquid Phase-Change Materials — •Mathias Schumacher, Hans Weber, Ivan Kaban, Riccardo Mazzarello, and Pal Jovari
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13:00 |
DS 3.14 |
Dielectric properties and AC conductivity of amorphous phase change materials — •chao chen, hanno volker, peter jost, marvin kaminski, and matthias wuttig
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