Regensburg 2016 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 40: Focussed Session: Oxide Semiconductors for Device and Energy Applications I
(Joint session of DS and HL, organized by DS)

DS 40.1: Topical Talk

Donnerstag, 10. März 2016, 09:30–10:15, H11

Oxide semiconductors: materials design and applications — •Hideo Hosono — Tokyo Institute of Technology, Yokohama, Japan,

Oxide semiconductors have a long history comparable to IV group element semiconductors. Although industrial application remains still a few, industrial application of thin film transistors with oxide semiconductor (IGZO) channel has started to drive high resolution, large sized OLED-TVs as well as energy-saving LCDs recently, and Ga2O3 with a band gap of ~5eV is attracting as a semiconductor for power electronic applications.

The chemical bonding of oxides is rather different from that of typical semiconductors, which in turn gives unique band structure and crystal structure. In this talk, I review the progress of oxide semiconductors in last 2 decades focusing on materials design and applications utilizing the unique nature of oxides.