Regensburg 2016 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 40: Focussed Session: Oxide Semiconductors for Device and Energy Applications I
(Joint session of DS and HL, organized by DS)
DS 40.7: Vortrag
Donnerstag, 10. März 2016, 12:30–12:45, H11
Surface structure of β-Ga2O3(100) via classical and quantum mechanical rainbow scattering — •Marco Busch1, Eric Meyer1, Helmut Winter1, Zbigniew Galazka2, Klaus Irmscher2, and Konrad Gärtner3 — 1Humboldt-Universität zu Berlin, Institut für Physik, Newtonstrasse 15, 12489 Berlin, Germany — 2Leibniz-Institut für Kristallzüchtung, Max-Born-Strasse 2, 12489 Berlin, Germany — 3Institut für Fest- körperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany
Fast light atoms and molecules with energies from 200 eV up to several tens of keV are grazingly scattered from a clean and well-ordered β-Ga2O3(100) surface. The angular distributions of projectiles scattered in the regime of axial surface channeling show intensity maxima, which can be described with the concept of the classical rainbow scattering and offer the determination of the interaction surface potential. However, for decreasing projectile energy one can observe Bragg peaks in the angular distributions, which can be interpreted within the framework of quantum mechanics only. Here, we present investigations of the quantum scattering from the ex-situ cleaved and in-situ annealed (100) surface of β-Ga2O3 single crystals, grown by the Czochralski method. The splittings of Bragg peaks and their intensity modulations were so far exploited to deduce information on the arrangement of the atoms and thereby the termination and relaxation of the topmost surface layer [1]. Based on these investigations, the adsorption of atoms and molecules on the β-Ga2O3(100) surface can be studied in detail. [1] M. Busch et al., Appl. Phys. Lett. 105, 051603 (2014).