Regensburg 2016 – scientific programme
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DS: Fachverband Dünne Schichten
DS 41: Transport: Molecular Electronics and Photonics I
(Joint session of CPP, DS, HL, MA, O and TT, organized by TT)
DS 41.11: Talk
Thursday, March 10, 2016, 12:15–12:30, H23
Molecular switches for dangling bond circuits — •Thomas Lehmann1,2, Dmitry A. Ryndyk1,2, and Gianaurelio Cuniberti1,2 — 1Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden, Germany — 2Dresden Center for Computational Materials Science (DCMS), TU Dresden, Germany
On the road to atomic-scale electronic circuits, dangling bond wires are promising candidates. Dangling bonds are formed by selectively removing hydrogen from a passivated silicon surface [1,2] and multiple dangling bonds in a row feature extended electronic states. Those quasi 1D surface structures can be used as atomic scale interconnects. In such circuits, molecules, which can controllably passivate or depassivate a dangling bond can provide logical inputs for constructing simple logic elements. In this talk, we present recent studies combining density-functional based approaches with Green function methods of a molecular switch for dangling bond wires on silicon.
[1] T. Hitosugi, T. Hashizume, S. Heike, S. Watanabe, Y.Wada,
T. Hasegawa, K. Kitazawa, Jpn. J. Appl. Phys. 36, L361 (1997)
[2] H. Kawai, F. Ample, Q. Wang, Y. K. Yeo, M. Saeys, C. Joachim,
J. Phys. Condens. Matter 24, 095011 (2012)