Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 42: Organic Electronics and Photovoltaics II
(Joint session of CPP, DS, HL and O, organized by CPP)

DS 42.1: Hauptvortrag

Donnerstag, 10. März 2016, 09:30–10:00, H40

Patterned organic ferroelectric memory diodes by solution micromolding — •Paul Blom, Thomas Lenz, Simon Benneckendorf, Kamal Asadi, and Dago de Leeuw — Max Planck Institute for Polymer Research, Ackermannweg 10, Mainz, Germany, D-55128

Ferroelectric polymers are promising candidates for memory technology, since they provide two bistable non-volatile polarization states corresponding to a Boolean 1 and 0, which can repeatedly be switched by an external field. The most widely investigated organic ferroelectric is the copolymer of poly(vinylidene fluoride) and trifluoroethylene (P(VDF-TrFE)). However, implementation of ferroelectric capacitors into integrated circuits is hampered by the read-out of the information being destructive. This problem can be overcome by using phase separated blends of P(VDF-TrFE) with a semiconducting polymer. The bi-stable polarization state of the P(VDF-TrFE) yields the binary information that can be read-out non-destructively by the current through the semiconducting columns. Phase separation however is a random process that yields a spatially undefined microstructure. Here we use solution micromolding to obtain a linear grating of P(VDF-TrFE). he space in between the lines is backfilled with a semiconducting polymer, resulting in a binary array between two electrodes. The resulting ferroelectric diode can be programmed reversibly in a low resistive on-state and high resistive off-state. When the bias is turned off, the information is retained. The performance can be optimized by down scaling the lateral dimensions of the binary array.