DS 44: Physics and Application of Emergent 2D-semiconductors and their Heterostructures I
(Joint session of DS and HL, organized by DS)
Donnerstag, 10. März 2016, 11:15–13:15, H8
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11:15 |
DS 44.1 |
Defects in two-dimensional materials: their production under irradiation, evolution and properties from first-principles calculations — •Arkady Krasheninnikov
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11:30 |
DS 44.2 |
Phonon induced line broadening and population of the dark exciton in a deeply trapped localized emitter in monolayer WSe2 — •Yu-Ming He, Chao-Yang Lu, Jian-Wei Pan, Sven Höfling, and Chrisitian Schneider
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11:45 |
DS 44.3 |
Gate voltage dependence of the electron mobility in monolayer MoS2−LiNbO3 field effect transistors — •Wladislaw Michailow, Edwin Preciado, Florian Schülein, Benjamin Möller, Ariana Nguyen, David Barroso, Miguel Isarraraz, Gretel von Son, I-Hsi Lu, Velveth Klee, John Mann, Andreas Hörner, Achim Wixforth, Ludwig Bartels, and Hubert Krenner
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12:00 |
DS 44.4 |
Resistivity switching in chalcogenide based interfacial phase change materials — •Nicki F. Hinsche and Kristian S. Thygesen
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12:15 |
DS 44.5 |
Electrical properties of CVD Molybdenum disulfide — •Wajid Awan, Tommy Schönherr, Artur Erbe, Stefan Facsko, and Xinliang Feng
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12:30 |
DS 44.6 |
Nonlinear Optics in a Rydberg-Excited Semiconductor Cavity — •Valentin Walther, Robert Johne, and Thomas Pohl
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12:45 |
DS 44.7 |
The contribution has been withdrawn.
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13:00 |
DS 44.8 |
Enabling a new class of electronic devices using self-aligned nanodomain boundaries to open a charge transport gap in trilayer graphene — •Victor Aristov, Olga Molodtsova, Sergey Babenkov, Tsung-Wei Huang, Askar Syrlybekov, Mourad Abid, Dmitry Marchenko, Jaime Sánchez-Barriga, Partha Sarathi Mandal, Andrei Varykhalov, Yuran Niu, Barry Murphy, Sergey Krasnikov, Olaf Lübben, Alexander Chaika, and Han-Chun Wu
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