Regensburg 2016 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 44: Physics and Application of Emergent 2D-semiconductors and their Heterostructures I
(Joint session of DS and HL, organized by DS)

DS 44.1: Vortrag

Donnerstag, 10. März 2016, 11:15–11:30, H8

Defects in two-dimensional materials: their production under irradiation, evolution and properties from first-principles calculations — •Arkady Krasheninnikov — Helmholtz Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Germany — Department of Applied Physics, Aalto University, Finland

Following isolation of a single sheet of graphene, many other 2D systems such as hexagonal BN and transition metal dichalcogenides (TMDs) were manufactured. Among them, TMD sheets have received particular attention, as these materials exhibit intriguing. Moreover, the properties can further be tuned by introduction of defects and impurities. In my talk, I will present the results [1] of our first-principles theoretical studies of defects (native and irradiation-induced) in inorganic 2D systems obtained in collaboration with several experimental groups. I will further discuss defect- and impurity-mediated engineering of the electronic structure of 2D materials.

[1] Nature Comm. 6 (2015) 6736; ACS Nano 9 (2015) 3274; ACS Nano (2015) DOI: 10.1021/acsnano.5b04851; Phys. Rev. B 91 (2015) 125304; Adv. Mater. 26 (2014) 2857; Phys. Rev. X 4 (2014) 031044; see http://physics.aalto.fi/~ark/publist.html for complete list of publications.