Regensburg 2016 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 44: Physics and Application of Emergent 2D-semiconductors and their Heterostructures I
(Joint session of DS and HL, organized by DS)

DS 44.2: Vortrag

Donnerstag, 10. März 2016, 11:30–11:45, H8

Phonon induced line broadening and population of the dark exciton in a deeply trapped localized emitter in monolayer WSe2 — •Yu-Ming He^1,3, Chao-Yang Lu³, Jian-Wei Pan³, Sven Höfling^1,2,3, and Chrisitian Schneider¹ — ¹Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany — ²SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS,United Kingdom — ³Hefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, & CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China

We study locally trapped single excitons in a mechanically exfoliated WSe2 monolayer semiconductor with respect to their temperature stability, spectral diffusion and decay dynamics. We identify strong signatures of phonon induced spectral broadening in these emitters for elevated temperatures accompanied by temperature induced luminescence quenching. A direct correlation between the drop in intensity at higher temperatures with the phonon induced population of dark states in WSe2 is established.