Regensburg 2016 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 44: Physics and Application of Emergent 2D-semiconductors and their Heterostructures I
(Joint session of DS and HL, organized by DS)
DS 44.3: Vortrag
Donnerstag, 10. März 2016, 11:45–12:00, H8
Gate voltage dependence of the electron mobility in monolayer MoS2−LiNbO3 field effect transistors — •Wladislaw Michailow1, Edwin Preciado2, Florian Schülein1, Benjamin Möller1, Ariana Nguyen2, David Barroso2, Miguel Isarraraz2, Gretel von Son2, I-Hsi Lu2, Velveth Klee2, John Mann2, Andreas Hörner1, Achim Wixforth1, Ludwig Bartels2, and Hubert Krenner1 — 1Insitut für Physik, Universität Augsburg, Germany — 2University of California, Riverside, USA
In field effect transistors (FETs) based on novel two-dimensional semiconductor materials, detailed knowledge of the density and the mobility of charge carriers in the conducting channel is of paramount importance. In the most common approach the field effect mobility and charge carrier density are determined by a simple parallel-plate capacitor model. In this model the carrier mobility is assumed to be independent of the gate potential. Here we report on investigations of monolayer MoS2−LiNbO3 FETs [1] in which we determined the source-drain current and the capacitance as function of gate voltage. We analyze both using a theoretical model of a two-dimensional free electron gas. This analysis allows us to derive both the charge carrier density and the mobility over the full ± 40 V range of gate voltage. Using our advanced analysis we show that for our structure the established parallel-plate capacitor model is oversimplified and overestimates the carrier mobility by a factor of ≳ 4.
[1] E. Preciado et al., Nat. Commun. 6, 8593 (2015).