Regensburg 2016 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 44: Physics and Application of Emergent 2D-semiconductors and their Heterostructures I
(Joint session of DS and HL, organized by DS)
DS 44.4: Vortrag
Donnerstag, 10. März 2016, 12:00–12:15, H8
Resistivity switching in chalcogenide based interfacial phase change materials — •Nicki F. Hinsche and Kristian S. Thygesen — Center for Atomic-scale Materials Design, Technical University of Denmark, 2830 Kgs. Lyngby, Denmark
Chalcogenide based phase change materials (PCM) are emerging candidates for next generation non-volatile, ultra-fast memories. In contrast to conventional amorphous-crystal phase transition driven PCM, e.g. Ge2Sb2Te5, recently a new type of PCM device named interfacial phase change memory (iPCM) was proposed [1]. Here the electrical pulse induced movement of the atoms is limited to the interface, therefore substantially reducing the switching energies and allowing for shorter switching times.
By means of DFT electronic-structure [2] and Boltzmann transport calculations [3], we discuss for an iPCM GeTe-Sb2Te3 heterostructure the electrical resistivity change caused by the structural switching at the interface. With a close relation of the material system to the family of topological insulators, ferroelectrics [4] and thermoelectrics, the possibility of a ferroelectric controllable topological phase transition and the ultra-fast modification of the thermoelectric properties, applicable for fast thermal switches, will be analysed additionally.
[1] R. E. Simpson et al., Nature Nanotechnology 6 8501(2011); [2] J. Enkovaara et al., J. Phys.: Condens. Matter 22 253202 (2010); [3] N. F. Hinsche et al., ACS Nano 9 4406 (2015) [4] A. V. Kolobov et al., APL Mater. 2 066101 (2014)