Regensburg 2016 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
DS: Fachverband Dünne Schichten
DS 44: Physics and Application of Emergent 2D-semiconductors and their Heterostructures I
(Joint session of DS and HL, organized by DS)
DS 44.8: Talk
Thursday, March 10, 2016, 13:00–13:15, H8
Enabling a new class of electronic devices using self-aligned nanodomain boundaries to open a charge transport gap in trilayer graphene — •Victor Aristov1,2,3, Olga Molodtsova1,4, Sergey Babenkov1, Tsung-Wei Huang5, Askar Syrlybekov6, Mourad Abid7, Dmitry Marchenko8, Jaime Sánchez-Barriga8, Partha Sarathi Mandal8, Andrei Varykhalov8, Yuran Niu9, Barry Murphy6, Sergey Krasnikov6, Olaf Lübben6, Alexander Chaika2,6, and Han-Chun Wu6 — 1DESY, Hamburg, Germany — 2ISSP RAS, Chernogolovka, Russia — 3TU Bergakademie, Freiberg, Germany — 4ITMO, Saint Petersburg, Russia — 5National Taiwan University, Taipei, Taiwan — 6Trinity College, Dublin, Ireland — 7King Saud University, Riyadh, Saudi Arabia — 8BESSY, Berlin, Germany — 9Max-lab, Lund, Sweden
Trilayer graphene reveals unique electronic properties interesting for fundamental science and technological applications. The ability to achieve a high on-off current ratio is the central question in this field. We propose a simple method to achieve a current with high on-off ratio by opening a transport gap in trilayer graphene with self-aligned periodic nanodomain boundaries (NBs). Our low temperature transport measurements clearly demonstrate that the self-aligned periodic NBs induce a huge charge transport gap, more than 1.3 eV at 10 K. As a result of our study the feasibility of creating new electronic nanostructures with high on-off current ratios using graphene on cubic-SiC/Si wafers was shown. This work was supported by the RAS, RFBR grants No 140200949 and 140201234, by SPP 1459 of DFG.