Regensburg 2016 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 46: Topological Insulators I
(Joint session of DS and HL, organized by HL)
DS 46.5: Vortrag
Donnerstag, 10. März 2016, 16:15–16:30, H10
Aharonov-Bohm effect in the 3D topological insulator HgTe — •Johannes Ziegler1, Dmitriy Kozlov1,2,3, Dmitry Kvon2,3, Nikolay Mikhailov2, Sergey Dvoretsky2, and Dieter Weiss1 — 1Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Germany — 2A.V. Rzhanov Institue of Semiconductor Physics, Novosibirsk, Russia — 3Novosibirsk State University, Russia
We present our progress in the investigation of the Aharonov-Bohm effect in ring and nanowire structures, fabricated from high-mobility strained 80 nm HgTe films with a wet etching technique. The nanostructures are equipped with topgates to allow tuning of the Fermi level Ef and are measured in a dilution cryostat.
The focus lies on Topological Insulator nanowires, where it is expected that the magnetic flux Φ through the wire leads to both Φ0 and Φ0/2 periodic oscillations [1]. Φ0 (= h/e) periodic oscillations are expected to occur in the ballistic regime for a large range in Ef. For ballistic devices, both minima and maxima of the conductance are expected at Φ = Φ0/2 with varying Ef. In the case of diffusive transport, Φ0 periodic oscillations are expected for Ef close to the Dirac point, while tuning Ef away from the Dirac Point leads to Φ0/2 (= h/2e) periodic oscillations.
[1] J.H. Bardarson et al., Phys. Rev. L 105, 156803 (2010)