DS 48: Oxide Semiconductors for Device and Energy Applications II
(Joint session of DS and HL, organized by DS)
Donnerstag, 10. März 2016, 15:00–16:45, H11
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15:00 |
DS 48.1 |
How Seebeck coefficient measurements help determine oxide transport properties — •Alexandra Papadogianni, Oliver Bierwagen, Mark E. White, James S. Speck, Zbigniew Galazka, Kelvin H. L. Zhang, Yingge Du, and Scott A. Chambers
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15:15 |
DS 48.2 |
Metal incorporation and reaction-kinetics for the molecular beam epitaxial growth of (GaxIn1−x)2O3 — •Patrick Vogt and Oliver Bierwagen
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15:30 |
DS 48.3 |
Application of Cr2O3 and Cr2O3:Mg as a Buffer Layer in Organic Solar Cells — •Daragh Mullarkey, Elisabetta Arca, Linda Cattin, Jean Christian Bernède, and Igor Shvets
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15:45 |
DS 48.4 |
TiO2 laminated Silicon microstructures based stable photocathode for water splitting — •Chittaranjan Das, Massimo Tallarida, and Dieter Schmeisser
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16:00 |
DS 48.5 |
Optical and Magneto-Optical Investigation of Normal and Disordered ZnFe2O4 in Relation to Magnetic Properties — •Vitaly Zviagin, Peter Richter, Yogesh Kumar, Israel Lorite, Michael Lorenz, Dietrich R.T. Zahn, Georgeta Salvan, Pablo Esquinazi, Marius Grundmann, and Rüdiger Schmidt-Grund
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16:15 |
DS 48.6 |
Monitoring Proton Diffusion in Thin Films of Tungsten Oxide — •Simon Burkhardt, Sabrina Darmawi, Matthias T. Elm, and Peter J. Klar
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16:30 |
DS 48.7 |
Oxygen Vacancies in the Ultrathin SiO2 Interfacial Layer of High-K/Metal Gate CMOS Devices — •Florian Lazarevic, Roman Leitsmann, Philipp Plänitz, and Michael Schreiber
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