Regensburg 2016 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
DS: Fachverband Dünne Schichten
DS 48: Oxide Semiconductors for Device and Energy Applications II
(Joint session of DS and HL, organized by DS)
DS 48.1: Talk
Thursday, March 10, 2016, 15:00–15:15, H11
How Seebeck coefficient measurements help determine oxide transport properties — •Alexandra Papadogianni1, Oliver Bierwagen1, Mark E. White2, James S. Speck2, Zbigniew Galazka3, Kelvin H. L. Zhang4, Yingge Du4, and Scott A. Chambers4 — 1Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany — 2Materials Department, University of California, Santa Barbara, California 93106, USA — 3Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, D-12489 Berlin, Germany — 4Pacific Northwest National Laboratory, Richland, Washington 99352, USA
Measuring the Hall effect is a common and convenient method to investigate the electrical transport properties of thin samples, providing us with an estimate of integral sheet carrier concentration. In low-mobility p-type semiconducting oxides, such as the Sr-doped LaCrO3, however, Hall measurements fail. For such instances, studying thermoelectric properties, namely the Seebeck coefficient, can be a simple alternative, which provides us with the carrier type and volume carrier concentration. A combination of Seebeck and Hall measurements can moreover be used for estimating the actual thickness of a carrier system within a semiconductor. As an example, an application on n-type SnO2 shows how this method can help distinguish bulk carriers, with homogeneous depth distribution, from sheet carriers accumulated within a thin layer.