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DS: Fachverband Dünne Schichten

DS 48: Oxide Semiconductors for Device and Energy Applications II
(Joint session of DS and HL, organized by DS)

DS 48.2: Vortrag

Donnerstag, 10. März 2016, 15:15–15:30, H11

Metal incorporation and reaction-kinetics for the molecular beam epitaxial growth of (Ga_xIn_1−x)₂O₃ — •Patrick Vogt and Oliver Bierwagen — Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany

This contribution presents the metal incorporation and reaction-kinetics study of the plasma-assisted molecular beam epitaxial (MBE) growth of the transparent semiconducting oxide alloy (Ga_xIn_1−x)₂O₃. By using MBE, an impinging Ga- (Φ_Ga), In- (Φ_In), and oxygen-flux (Φ_O) react amongst others to (Ga_xIn_1−x)₂O₃ on a heated, single-crystalline substrate under ultra-high vacuum conditions. The data obtained were measured in-situ by a laser reflectometry (LR) set-up and a line-of-sight quadrupole mass spectrometer (QMS) or ex-situ by energy dispersive X-ray spectroscopy (EDX). The LR allowed measuring the growth-rate (ρ), the QMS enabled identifying the species that desorbed off the substrate which are not incorporated into the alloy, and the EDX measurements revealed the In incorporation x and the reciprocal Ga incorporation 1-x.

We present the growth rate dependencies of the binary grown In₂O₃ and Ga₂O₃ as function of growth temperature (T_G). Furthermore, we show the dependence of ρ and x for the ternary grown alloy on T_G, the metal-to-oxide ratio (r_MeO = (Φ_In+Φ_Ga)/Φ_O ) , and the In-to-Ga ratio (r_InGa = Φ_In/Φ_Ga).

The measured discrepancy of ρ for the binary grown oxides compared to x for the ternary grown alloy can be explained by the different adhesion energies for In and Ga on the (Ga_xIn_1−x)₂O₃ surfaces.