Regensburg 2016 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
DS: Fachverband Dünne Schichten
DS 48: Oxide Semiconductors for Device and Energy Applications II
(Joint session of DS and HL, organized by DS)
DS 48.3: Talk
Thursday, March 10, 2016, 15:30–15:45, H11
Application of Cr2O3 and Cr2O3:Mg as a Buffer Layer in Organic Solar Cells — •Daragh Mullarkey1, Elisabetta Arca1, Linda Cattin2, Jean Christian Bernède3, and Igor Shvets1 — 1School of Physics and CRANN, Trinity College Dublin, University of Dublin, Ireland — 2Université de Nantes, Institut des Matériaux Jean Rouxel, France — 3Université de Nantes, MOLTECH-Anjou, France
The use of undoped Cr2O3 and p-type Cr2O3:Mg as an anode buffer layer in organic solar cells is explored. The effects of buffer layer thickness, roughness, and growth conditions on the properties of the solar cell were studied. These effects were investigated for solar cells grown on both indium tin oxide and fluorine doped tin oxide. In both cases, Cr2O3 and Cr2O3:Mg were found to improve the efficiency of the solar cell.
The band offsets between the anode material and the buffer layer, as well as between the buffer layer and the organic absorber were studied by X-ray Photoelectron Spectroscopy (XPS) and Ultra Violet Photoelectron Spectroscopy (UPS). The efficiency of the solar cells is discussed in terms of the experimentally determined band alignment.