Regensburg 2016 – scientific programme

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DS: Fachverband Dünne Schichten

DS 5: Two-dimensional Materials
(Joint session of DS and HL, organized by HL)

DS 5.6: Invited Talk

Monday, March 7, 2016, 11:15–11:45, H16

Epitaxial paradigms of van der Waals bonded chalcogenide materials — •Raffaella Calarco — Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

In recent years it has become clear that materials with covalent bonding in only two dimensions (2D) have attractive properties for devices. The bonding in the third dimension, which is between individual layers, occurs by van der Waals (vdW) forces, which are weaker if compared to the covalent bonding. Materials used in conventional devices are instead characterized by covalent bonding in three dimensions (3D). In the present contribution, I shed some light on understanding the mechanisms that determine the interface structure between 2D and 3D or 2D materials. To study possible options for altering the bonding configurations of the 2D-3D interface GeTe-Sb2Te3 layers are deposited by molecular beam epitaxy on top of five different surface reconstructions-passivation of the Si(111). The 2D-2D interface is best studied using graphene as a substrate. Finally, I address the most crucial issue: The realization of vdW epitaxy in Sb2Te3-GeTe superlattices. Such superlattices, if compared to their alloy counterpart, show impressive performances highly attractive for future non-volatile memory applications.