DS 52: Ion and Electron Beam Induced Processes
Donnerstag, 10. März 2016, 17:00–18:15, H11
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17:00 |
DS 52.1 |
High Current LMIS for Ion Implanters and Single-ended Accelerators — •Philipp Laufer, Daniel Bock, Wolfgang Pilz, Lothar Bischoff, and Martin Tajmar
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17:15 |
DS 52.2 |
Milling and imaging techniques at the helium ion microscope for sub 2 nm nanopore fabrication — •Daniel Emmrich, Emanuel Marschewski, Jani Kotakoski, Achim Nadzeyka, Frank Nouvertné, Jannik Meyer, André Beyer, and Armin Gölzhäuser
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17:30 |
DS 52.3 |
Tuning pattern symmetry by choosing the substrate in reverse epitaxy — •Martin Engler, Xin Ou, and Stefan Facsko
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17:45 |
DS 52.4 |
Energy loss and charge exchange of slow highly charged ions in graphene — •Richard Wilhelm, Elisabeth Gruber, Valerie Smejkal, Janine Schwestka, Roland Kozubek, Anke Hierzenberger, Marika Schleberger, Stefan Facsko, and Friedrich Aumayr
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18:00 |
DS 52.5 |
Properties of TiO2 films grown by reactive ion beam sputter deposition — •Thomas Lautenschläger, Eric Thelander, Daniel Spemann, and Carsten Bundesmann
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