Regensburg 2016 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 52: Ion and Electron Beam Induced Processes
DS 52.1: Vortrag
Donnerstag, 10. März 2016, 17:00–17:15, H11
High Current LMIS for Ion Implanters and Single-ended Accelerators — •Philipp Laufer1, Daniel Bock1, Wolfgang Pilz1, Lothar Bischoff2, and Martin Tajmar1 — 1Technische Universität Dresden, 01062 Dresden — 2Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden
An ion source module based on high current Liquid Metal Ion Sources (LMIS) will be presented for optional use of mon - or polyatomic ion currents of metallic or semiconducting elements [1, 2, 3]. Total emitted ion currents in the order of 100 µA can be reached which are formed to a nearly parallel ion beam of 2 mm diameter using an asymmetric ion-optical Einzel lens. Cluster ion fractions are in the range of per mil up to a few percent dependent on the emitted elements. A mass separation system (Wien filter) selects the desired ions while a quadrupole is used for beam adjustment. Few-atomic cluster ions are of interest to be implanted for an effective surface modification [4]. High cluster ion currents enable the formation of different nanostructures or even smooth surfaces over an area in cm2-range. The LMIS preparation and the performance of the ion beam module at certain experiments will be presented and discussed.
[1] M. Tajmar, et al., Ultramicroscopy 111 (2010) 1
[2] D. Bock, et. al., DPG Conference Dresden (2014) DS 17.6
[3] P. Laufer, et al., DPG Conference Berlin (2015) DS 19.9
[4] L. Bischoff, et al., Nucl. Instr. and Meth. B 272 (2012) 198