Regensburg 2016 – scientific programme
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DS: Fachverband Dünne Schichten
DS 52: Ion and Electron Beam Induced Processes
DS 52.3: Talk
Thursday, March 10, 2016, 17:30–17:45, H11
Tuning pattern symmetry by choosing the substrate in reverse epitaxy — •Martin Engler1, Xin Ou2, and Stefan Facsko1 — 1Institute for Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany — 2Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China
Ion beam erosion of solid surfaces is long known to yield regular surface morphologies, like periodic ripples or hexagonal dot patterns. At room temperature, semiconductors are amorphized by the ion beam. Pattern formation under these conditions has been studied extensively in the last decades.
Ion beam erosion above a material dependent dynamic recrystallization temperature allows the formation of crystalline nano scale patterns on semiconductor surfaces. At these elevated temperature pattern formation is driven by diffusion of vacancies created by sputtering of atoms. Anisotropic diffusion on the surface and diffusion barriers across step edges lead to the formation of pattern reflecting the symmetry of the irradiated surface. We will discuss how the surface symmetry determines the pattern symmetry.