Regensburg 2016 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 53: Postersession DS/HL

DS 53.15: Poster

Donnerstag, 10. März 2016, 16:00–19:00, Poster A

Molecular beam epitaxy growth and in situ analysis of transition metal dichalcogenides — •Avanindra Kumar Pandeya, Amilcar Bedoya Pinto, Ilya Kostanovskiy, Kai Chaang, and Stuart Parkin — Max Plank Institute for Microstructure Physics, Halle, Germany

Atomically thin transition metal dichalcogenides (TMDCs), layered materials which have captured great attention due to their tunable electronic properties [1], are commonly fabricated via exfoliation of high-quality bulk crystals. Although there has been tremendous progress in fabricating devices out of exfoliated heterostructures [2], there are other effects, such as spin transfer, that need atomically clean interfaces for an optimum harvesting. Our approach is to grow TMDCs layers by molecular beam epitaxy and assess the layer and interface quality using in-situ characterization (RHEED, LEED, XPS, AES and STM). The fabrication of high-quality TMDCs heterostructures by UHV methods opens new prospects for the design of interface-sensitive electronic and spintronic devices.

1. J. Kang, et al. Applied Physics Letters, 102, 012111 (2013)

2. C. Lee, et. al. Nature Nanotechnology 9, 676-681, (2014)