Regensburg 2016 – scientific programme

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DS: Fachverband Dünne Schichten

DS 53: Postersession DS/HL

DS 53.2: Poster

Thursday, March 10, 2016, 16:00–19:00, Poster A

Mask-less Selective Area Epitaxy of self-catalyzed GaN-microrods on silicon — •Christian Blumberg, Dennis Jansen, Werner Prost, and Franz-Josef Tegude — University Duisburg-Essen, Faculty of Engineering, Solid-State Electronics Department, Duisburg, Germany

3D GaN microrod structures offer the potential to fabricate electro-optical devices that may outperform their 2D counter parts. Promising candidates are the GaN/InGaN microrod-LEDs. These m-planar GaN/InGaN-LEDs are not limited by quantum-confined Stark effect at the GaN/InGaN interface (long charge-carrier lifetimes and less radiative efficiency at high intensities). A major issue by producing a macro sized usable LED from microrod-structures is the inhomogeneous distribution among the microrods: length, diameter and distance between each rod changes from rod to rod. As a result each rod-device has different electro-optical properties, which leads e.g. to a broadening of emission spectrum of a LED, consisting of parallel electric-powered microrod-LEDs. In order to reach a high homogeneity selective area epitaxy (SAE) of the rods is necessary. In this work we discuss the high-density seeding of rods on Si (111). We have developed a new method of the SAE for self-catalysed GaN-rods, which is based on pattering the Si-surface by nanoimprint technology. In contradiction to other methods for SAE we did not use a dielectric mask (like SiNx or SiOx). By adapting the Si-surface pattern (depth of etched holes and surface cleaning) and the epitaxial parameters (silane-flow and V/III) we were able to grow position controlled GaN-rods on Si.