Regensburg 2016 – scientific programme

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DS: Fachverband Dünne Schichten

DS 53: Postersession DS/HL

DS 53.35: Poster

Thursday, March 10, 2016, 16:00–19:00, Poster A

Organic thin film growth on exfoliated hexagonal boron nitride — •Jakob Alexander Genser¹, Markus Kratzer¹, Alexandar Matkovic², Rados Galic², and Christian Teichert¹ — ¹Institute of Physics, Montanuniversität Leoben, Austria — ²Institute of Physics, University of Belgrade, Serbia

Hexagonal boron nitride (h-BN) is a two-dimensional insulator. Especially in conjunction with graphene as ultrathin flexible electrode in organic electronics h-BN has great potential as 2D dielectric. Therefore, it is essential to understand organic thin film growth on h-BN.

Here, we use the organic semiconductor molecule para-hexaphenyl (6P) to study the growth of small, linear, conjugated molecules on h-BN. As substrates, exfoliated h-BN flakes transferred onto a SiO2 support is used. Submonolayer 6P thin films are prepared by vapor deposition in a hot wall epitaxy (HWE) system. The resulting thin film morphologies are investigated as a function of substrate temperature using atomic force microscopy. First results indicate that 6P forms needle like structures consisting of molecules with their long axes oriented parallel to the h-BN plane. The needles show preferential growth directions corresponding to the substrate symmetry.