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DS: Fachverband Dünne Schichten

DS 53: Postersession DS/HL

DS 53.8: Poster

Donnerstag, 10. März 2016, 16:00–19:00, Poster A

Pseudomorphic growth and relaxation of alpha gallium oxide on sapphire substrate — •Zongzhe Cheng¹, Patrik Vogt¹, Robert Schewski², Oliver Bierwagen¹, Martin Albrecht², Achim Trampert¹, and Michael Hanke¹ — ¹Paul-Drude-Institut für Festkörperelektronik (PDI), Berlin, Germany — ²Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany

Alpha phase gallium oxide is a transparent semiconducting material with an indirect wide band gap of around 5eV. The heteroepitaxial growth of alpha phase gallium oxide on insulating c-plane sapphire (band gap = 8.8ev) can be realized by molecular beam epitaxy since they have the same corundum crystal structure and small lattice mismatch (4.6% in a-axis and 3.3% in c-axis). However under ambient conditions, the beta phase gallium oxide with a monoclinic structure is thermodynamically more stable than the alpha phase, so normally beta phase gallium oxide starts to grow after a three atomic layer of alpha phase gallium oxide on the c-plane sapphire substrate in molecular beam epitaxy growth. So it is important to stabilize the growth of alpha phase gallium oxide trying to get pure alpha phase gallium oxide layer on the substrate in case of device applications (eg. 2deg). In this work, we use mainly synchrotron radiation and high resolution transmission electron microscopy in order to understand the pseudomorphic growth and relaxation of the alpha phase gallium oxide on c-plane sapphire substrate. In addition, an annealing experiment on a low-temperature-deposited amorphous gallium oxide layer is performed trying to crystallize the gallium oxide layer and stabilize the alpha phase.