DS 56: Focussed Session: Resistive Effects II
Freitag, 11. März 2016, 09:30–11:45, H11
 |
09:30 |
DS 56.1 |
Topical Talk:
Processes at the nanoscale: Recent progress in understandings on ReRAMs — •Ilia Valov
|
|
|
|
10:00 |
DS 56.2 |
Topical Talk:
Tunnel junction based memristors as artificial synapses — •Andy Thomas
|
|
|
| |
10:30 |
|
15 min. break.
|
|
|
|
10:45 |
DS 56.3 |
Metastable states of HfO2 suboxides and resistive switching — •Konstantin Z. Rushchanskii, Stefan Blügel, and Marjana Ležaić
|
|
|
|
11:00 |
DS 56.4 |
Avalanche-discharge-induced electrical forming in Ta2O5 based MIM structures — •Katharina Skaja, Christoph Bäumer, Oliver Peters, Stephan Menzel, Marco Moors, Hongshu Du, Manuel Bornhöfft, Chun-Lin Jia, Joachim Mayer, Rainer Waser, and Regina Dittmann
|
|
|
|
11:15 |
DS 56.5 |
KKRnano: A Massively Parallel KKR Green's Function Code for Large Scale Systems — •Marcel Bornemann, Rudolf Zeller, Roman Kovacik, and Stefan Blügel
|
|
|
|
11:30 |
DS 56.6 |
Bipolar resistive switching of p-YMnO3/n-SrTiO3:Nb junctions — •Agnieszka Bogusz, Daniel Blaschke, Barbara Abendroth, Ilona Skorupa, Danilo Bürger, Oliver G. Schmidt, and Heidemarie Schmidt
|
|
|
