Regensburg 2016 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 56: Focussed Session: Resistive Effects II

DS 56.1: Topical Talk

Freitag, 11. März 2016, 09:30–10:00, H11

Processes at the nanoscale: Recent progress in understandings on ReRAMs — •Ilia Valov — Forschungszentrum Jülich, PGI-7, 52425 Jülich, Germany

Since their re-discovery roughly 20 years ago the resistive switching memories (RRAM) turned out into one of the most exciting, innovative and multidisciplinary scientific field with a greatest potential for application in the nanoelectronics and information technology. Relating these systems to the missing memristor and pointing out the possible functionalities such as neuromorphic computing, non-volatile memories etc., pushed this topic to one of the highest priorities not only for the academic research but also for the nanoelectronics industry.

The present talk will focus on the processes at the nanoscale in memristive devices emphasizing the importance of understanding nanosize effects in order to design and control thin film device at the atomic scale. The recent achievements in the microscopic understandings of the physicochemical processes will be presented. The mobility of cations in VCM devices will be discussed in the light of bridging ECM and VCM mechanisms. The importance of interface dynamics, local charge concentration and distribution, the effects of moisture and in general the generic relevance of the counter charges will be highlighted. The nanobattery effect and its implications on both memristors theory and device stability and performance will be outlined on theoretical and experimental level.

The topic will be discussed in a more fundamental context of microscopic description of electrochemical processes at the atomic scale.