Regensburg 2016 – scientific programme
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DS: Fachverband Dünne Schichten
DS 56: Focussed Session: Resistive Effects II
DS 56.4: Talk
Friday, March 11, 2016, 11:00–11:15, H11
Avalanche-discharge-induced electrical forming in Ta2O5 based MIM structures — •Katharina Skaja1, Christoph Bäumer1, Oliver Peters1, Stephan Menzel1, Marco Moors1, Hongshu Du1,2, Manuel Bornhöfft1,2,3, Chun-Lin Jia1,2, Joachim Mayer2,3, Rainer Waser1,4, and Regina Dittmann1 — 1Peter Grünberg Institut, Forschungszentrum Jülich, 52425 Jülich , Germany — 2Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich, 52425 Jülich , Germany — 3Central Facility for Electron Microscopy, RWTH Aachen University, 52056 Aachen , Germany — 4Institute of Materials in Electrical Engineering and Information Technology II, RWTH Aachen University, 52056 Aachen , Germany
We investigated the resistive switching characteristics of Pt/ Ta2O5/Ta cells prepared by sputtering. Structural changes in the top electrode develops during the electrical forming process, which can be correlated to the formation of a dendrite-like conductive structure, which is induced by an avalanche discharge between the top electrode and the Ta2O5 layer, which occurs instead of a local breakdown between top and bottom electrode. The dendrite-like structure evolves primarily at structures with a pronounced interface adsorbate layer. Local conductive atomic force microscopy reveals that the entire dendrite region becomes conductive. We demonstrate by in-situ spectromicroscopy that the subsequent switching is caused by a valence change between Ta4+ and Ta5+, which takes place over the entire former Pt/ Ta2O5 interface of the dendrite-like structure.