Regensburg 2016 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 56: Focussed Session: Resistive Effects II

DS 56.6: Vortrag

Freitag, 11. März 2016, 11:30–11:45, H11

Bipolar resistive switching of p-YMnO₃/n-SrTiO₃:Nb junctions — •Agnieszka Bogusz^1,2, Daniel Blaschke¹, Barbara Abendroth³, Ilona Skorupa¹, Danilo Bürger², Oliver G. Schmidt^2,4, and Heidemarie Schmidt² — ¹Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany — ²Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107 Chemnitz, Germany — ³Institute for Experimental Physics, TU Bergakademie Freiberg, 09596 Freiberg, Germany — ⁴Institute for Integrative Nanosciences, IFW-Dresden, 01069 Dresden, Germany

Resistive switching (RS) phenomena of oxides in metal-insulator-metal structures have been widely investigated due to promising applications as a non-volatile memory and in neuromorphic circuits. In our previous works, we have demonstrated unipolar RS of YMnO₃-based structures [1]. This work investigates the non-volatile RS switching in Au/YMnO₃/Nb:SrTiO₃/Al structures with (p-YMnO₃)-(n-Nb:SrTiO₃) junctions. The YMnO₃ films are deposited by pulsed laser deposition on the (100)-SrTiO₃ doped with 0.5 wt.% of Nb substrates and exhibit bipolar RS. Observed RS behavior is assigned to the coupled electronic and ionic processes which depend on the depletion layer extension in the p-n junction. Exploitation of RS in p-n junctions offers additional functionalities of memristive devices, e.g. related to their optical properties.

[1]A. Bogusz et al., AIP Advances 4 (2014), A. Bogusz et al., Adv. Mater. Res. 1101 (2015).