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Regensburg 2016 – scientific programme

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DS: Fachverband Dünne Schichten

DS 57: Topological Insulators II
(Joint session of DS and HL, organized by HL)

DS 57.7: Talk

Friday, March 11, 2016, 11:30–11:45, H15

Bi2Se3-based heterostructures including magnetic layers: the case of n-QLs Bi2Se3 ontop of Mn-doped Bi2Se3 — •J. Honolka1, M. Valiska2, J. Warmuth3, M. Michiardi4, M. Vondracek1, A. S. Ngankeu4, V. Holy2, M. Bianchi4, G. Springholz5, V. Sechovsky2, P. Hofmann4, and J. Wiebe31Institute of Physics, ASCR, Prague, CZ — 2Department of Condensed Matter, Charles University, Prague, CZ — 3INF, University of Hamburg, Hamburg, DE — 4Department of Physics and Astronomy, iNANO, University of Aarhus, Aarhus, DK — 5Institute of Semiconductor Physics and Solid Solid State Physics, Johannes-Kepler University, Linz, AT

Interfaces between ferromagnetic and non-magnetic Bi2Se3 phases are studied as a material platform to investigate the influence of spin degrees of freedom on 3D topological insulator (TI) properties.

An inverted geometry of n quintuple layers (QLs) Bi2Se3 ontop of Mn-doped Bi2Se3 is achieved by molecular beam epitaxy for n=0 to n=24 QLs and allows to unhamperedly monitor the development of electronic and topological properties by surface sensitive key techniques like angular resolved photoemission spectroscopy. A gap at the Dirac point is observed at small n, which is gradually filled with increasing n. The Dirac point is fully reestablished at about n = 9 QLs. Band bending effects due to the proximity of the interface with the ferromagnetic layers are discussed.

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