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14:45 |
HL 15.1 |
1.3 µm low-density quantum dots for single photon emitters — •David Quandt, Pierce Munnelly, Udo Pohl, Stephan Reitzenstein, and André Strittmatter
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15:00 |
HL 15.2 |
Hybrid architecture for shallow accumulation mode AlGaAs/GaAs heterostructures with epitaxial gates — S. J. MacLeod, A. M. See, A. R. Hamilton, I. Farrer, D. A. Ritchie, •J. Ritzmann, A. Ludwig, and A. D. Wieck
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15:15 |
HL 15.3 |
In(Ga)As/GaAs quantum dots grown on GaP/Si(001) investigated on the atomic scale — •Celina S. Schulze, Xue Huang, Christopher Prohl, Vivien Füllert, Stavros Rybank, Scott J. Maddox, Stephen D. March, Seth R. Bank, Minjoo L. Lee, and Andrea Lenz
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15:30 |
HL 15.4 |
Growth and structure of In0.5Ga0.5Sb quantum dots on GaP — •Elisa Maddalena Sala, Gernot Stracke, Sören Selve, Tore Niermann, Michael Lehmann, Andre Strittmatter, and Dieter Bimberg
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15:45 |
HL 15.5 |
Electrostatically defined quantum dots in undoped Si/SiGe heterostructures — •Floyd Schauer, Christian Neumann, Christian Fritsch, Sebastian Schwägerl, Simon Pfaehler, Dieter Weiss, Kentarou Sawano, and Dominique Bougeard
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16:00 |
HL 15.6 |
Preparation of Silicon Nanocrystals in Silicon Carbide by a Multilayer Approach — •Charlotte Weiss, Andreas Reichert, and Stefan Janz
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16:15 |
HL 15.7 |
Hauptvortrag:
Mechanical Control of Excitonic States in Quantum Dots — Rinaldo Trotta, Javier Martín-Sánchez, and •Armando Rastelli
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16:45 |
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30 min. Coffee Break
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17:15 |
HL 15.8 |
An electro-photo-sensitive memristor for neuromorphic and arithmetic computing applications — •Patrick Maier, Fabian Hartmann, Monika Emmerling, Christian Schneider, Martin Kamp, Sven Höfling, and Lukas Worschech
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17:30 |
HL 15.9 |
Site-Controlled MBE Growth of III/V Semiconductor Nanowires Induced by Focused Ion Beam — •Sven Scholz, Rüdiger Schott, Arne Ludwig, and Andreas D. Wieck
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17:45 |
HL 15.10 |
Selective area growth of GaAs nanowires combining high vertical yield and desirable morphology — •Hanno Küpers, Abbes Tahraoui, Ryan B. Lewis, Henning Riechert, and Lutz Geelhaar
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18:00 |
HL 15.11 |
Top-down fabrication and characterization of reconfigurable silicon nanowires — •Dipjyoti Deb, Muhammad Bilal Khan, Yordan Georgiev, Markus Löffler, Walter Weber, Manfred Helm, and Artur Erbe
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18:15 |
HL 15.12 |
Electrical characterization and modelling of p-GaAs nanowires by MT-STM — •Andreas Nägelein, Matthias Steidl, Weihong Zhao, Stefan Korte, Peter Kleinschmidt, and Thomas Hannappel
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18:30 |
HL 15.13 |
In-situ growth of semiconductor/superconductor core-shell nanowires — •Nicholas Güsken, Torsten Rieger, Thomas Schäpers, Detlev Grützmacher, and Mihail Ion Lepsa
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