Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 15: Quantum Dots and Wires: Fabrication and Devices
HL 15.1: Vortrag
Montag, 7. März 2016, 14:45–15:00, H16
1.3 µm low-density quantum dots for single photon emitters — •David Quandt1, Pierce Munnelly1, Udo Pohl1, Stephan Reitzenstein1, and André Strittmatter2 — 1Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstraße 36, D-10623 Berlin, Germany — 2Otto-von-Guericke Universität Magdeburg, Universitätsplatz 2, D-39106 Magdeburg, Germany
The positioning of In(Ga)As quantum dots by means of a buried stressor has successfully been used to fabricate an electrically driven single photon source emitting in the wavelength range around 960 nm with a g(2)(0) value of 0.05 at 12.5 K. It is highly attractive to adopt this technique for the deterministic realization of practical single photons sources emitting at telecom wavelengths. Indeed it has been shown that it is possible to achieve emission wavelengths of 1.3 µm and beyond using In(Ga)As quantum dots on GaAs. Thus, a buried stressor based single photon source operating at telecommunication wavelengths is feasible. As preliminary work towards this goal, low density InGaAs quantum dots with an InGaAs strain reducing layer have been grown by MOCVD. First micro photoluminescence measurements show discrete excitonic emission lines of single quantum dots ranging from 1200 nm to 1400 nm.