Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 17: Transport: Topological Insulators - 2D (Joint session of DS, HL, MA, O and TT, organized by TT)
HL 17.7: Vortrag
Montag, 7. März 2016, 16:45–17:00, H18
Terahertz properties of Dirac electrons and holes in HgTe films with critical thickness — •Uladzislau Dziom1, Alexey Shuvaev1, Nikolai Mikhailov2, Ze Don Kvon2, and Andrei Pimenov1 — 1Institute of Solid State Physics, Vienna University of Technology, 1040 Vienna, Austria — 2Novosibirsk State University, Novosibirsk 630090, Russia
We present and discuss properties of mercury telluride (HgTe) films with critical thickness in far-infrared (THz) spectral range. Density of charge carriers is controlled, using contact-free optical gating by visible light. Transmission measurements in applied magnetic field demonstrate switching from hole to electron-like behavior, as illumination time increases. The cyclotron mass of the electrons, extracted from the data, shows a square root dependence upon the charge concentration in a broad range of parameters. This can be interpreted as a clear proof of a linear dispersion relations, i.e. Dirac-type charge carriers.