Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 23: Oxide Semiconductors I

HL 23.3: Vortrag

Dienstag, 8. März 2016, 10:00–10:15, H13

Nitrogen incorporation in SnO2 thin films grown by chemical vapor deposition — •Jie Jiang, Yinmei Lu, Benedikt Kramm, Fabian Michel, Christian T. Reindl, Max Kracht, Bruno K. Meyer, Detlev M. Hofmann, and Martin Eickhoff — I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Gießen, Germany

As a transparent conducting oxide film, SnO2 have great technological potential for the application in opto-electronic devices, due to its large band gap of 3.6 eV, and high carrier mobility of about 250 cm2/Vs at room temperature. Nitrogen is proposed to be an excellent anion dopant in SnO2 owing to its suitable electronegativity and ion size, high solubility limit, and non-toxicity. Here we study the characteristics of SnO2 films with high concentrations of incorporated nitrogen. We deposited SnO2-xNx thin films on c-sapphire substrates via chemical vapor deposition (CVD), using SnI2 powder and O2 and NH3 gas as source materials. The crystal structure, electrical properties and optical properties of the films were measured and investigated. The N atomic concentration in SnO2-xNx film increases from 0 to 7.9 at.% (XPS) without phase separation with increasing NH3 flow rate during the deposition. The substitutional lattice location in this concentration range was confirmed. The carrier concentration increases from 4.1E18 to 3.9E19 cm-3 and the absorption edge shifts from 4.26 to 4.08 eV. The effect of annealing on the structural, optical and electrical properties is also analyzed.