Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 23: Oxide Semiconductors I

HL 23.4: Vortrag

Dienstag, 8. März 2016, 10:15–10:30, H13

Doped and Undoped β-Ga₂O₃ Structures Prepared by Ultrasonic Nebulization and Spray Pyrolysis — •Constance Schmidt, Axel Fechner, and Dietrich R. T. Zahn — TU Chemnitz, Insitut für Physik, Reichenhainerstr. 70, 09126 Chemnitz

With its wide band gap of around 4.9 eV, β-Ga₂O₃ is a promising semiconductor for many applications like optoelectronic devices. Besides the established techniques for the preparation of β-Ga2O3 layers,for instance chemical vapor deposition, electron beam deposition, molecular beam epitaxy, and pulsed laser deposition, low cost techniques such as ultrasonic nebulization and spray pyrolysis are also of great interest. With the latter we obtained different types of microstructures of β-Ga₂O₃ (from 3D structures to thin films) on silicon substrates.

For the preparation of β-Ga₂O₃ a solution of Ga(NO₃)₃ in water, or in a water/ethanol mixture was employed. Rare earths, like Er⁺, Sm⁺ and Gd⁺, were used as dopants. The different β-Ga₂O₃ microstructures were confirmed by SEM, and investigated with XRD, Raman spectroscopy, and microscopic ellipsometry. In all cases β-Ga₂O₃ was clearly identified. Since the structures have dimensions in the micrometer range, Raman spectroscopy (325 nm, 514.7 nm) was used to investigate individual β-Ga₂O₃ structures and determine their composition and other effects like strain in detail.

The experimental results demonstate that even with the low cost techniques it is possible to produce high quality doped and undoped β-Ga₂O₃ thin films and other structures, which are interesting for potential applications.