Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 23: Oxide Semiconductors I

HL 23.8: Vortrag

Dienstag, 8. März 2016, 11:45–12:00, H13

Influence of cation stoichiometry on performance of unipolar and bipolar zinc-tin-oxide diodes — •Sofie Bitter, Peter Schlupp, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Institut für Exp. Physik II, Germany

Amorphous zinc-tin-oxide (ZTO) consists of naturally abundant, non-toxic elements only and can be deposited at room temperature with an electron density and a mobility as high as 10¹⁹ cm⁻³ and 10 cm²/Vs, respectively [1]. Therefore, ZTO is a suitable material for low-cost, transparent transistors and thus low-cost, transparent electronic applications.

We present our results on the influence of the Zn/Sn ratio on the electrical properties of thin films grown by pulsed laser deposition on glass substrates using a continuous composition spread method (CCS) [2]. Furthermore we discuss the performance of diodes fabricated thereon. Opposite to previous reports on only a limited number of discrete Zn/Sn ratios [3], we obtained a comprehensive data set for almost the entire composition range. Using energy dispersive X-ray analysis the spatial dependence of the Zn/Sn ratio was mapped. Charge carrier concentration and resistivity were determined in dependence on the composition. Further, the properties of Schottky diodes and all-amorphous pn-heterojunctions using ZnCo₂O₄ as p-type electrode will be discussed in dependence on the thin film stoichiometry.

[1] Jayaraj et al., J. Vac. Sci. & Technol. B, 26, 2, 2008

[2] von Wenckstern et al., CrystEngComm, 15, 10020, 2013

[3] Görrn et al., Applied Physics Letters, 91, 193504, 2007