Regensburg 2016 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 25: Quantum Information Systems (Joint session of HL and TT, organized by HL)
HL 25.9: Talk
Tuesday, March 8, 2016, 12:00–12:15, H15
Spin Coherence Time of Si Vacancies in Silicon Carbide Exceeding One Millisecond — •D. Simin1, H. Kraus1,2, A. Sperlich1, T. Ohshima2, G. V. Astakhov1, and V. Dyakonov1,3 — 1Experimental Physics VI, Julius Maximilian University of Wuerzburg, 97074 Wuerzburg — 2Japan Atomic Energy Agency (JAEA), 370-1292 Takasaki, Japan — 3ZAE Bayern, 97074 Wuerzburg
Quantum information processing has been the hot topic in the field of information theory for several decades. While great progress was achieved, both on the theoretical and experimental field, to recognize and to employ the most suitable material and information carrier from the vast amount of possibilities is still the main goal of ongoing research activities all over the world. Whereas a wide availability and easy handling are crucial for a functioning device, long-preserving spin coherence is also essential for such a system. Therefore, we investigate the coherence time properties of the Si-vacancies in a 4H-SiC wafer using the pulsed-ODMR technique. Implementing the common Rabi-, Ramsey-, Spin-Echo- and CPMG-sequences, we can precisely measure spin-lattice (T1) and spin-spin (T2) relaxation times. The measurements are not only conducted at ambient conditions, but also at different temperatures and in different magnetic fields. In particular, the coherent spin properties of the VSi defect are investigated in the temperature range from 10K to 300K and at magnetic field strengths of up to 30mT. Using dynamic decoupling protocols we achieve spin coherence time exceeding 1ms, demonstrating the high potential of SiC for various quantum applications.