Regensburg 2016 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 27: Zinc Oxide and Zinc Selenide

HL 27.1: Vortrag

Dienstag, 8. März 2016, 09:30–09:45, H17

Self-compensation in Al and Ga doped (Mg,Zn)O PLD thin films — •Abdurashid Mavlonov, Steffen Richter, Holger von Wenckstern, Rüdiger Schmidt-Grund, Michael Lorenz, and Marius Grundmann — Universität Leipzig, Leipzig, Germany

The Al and Ga doping efficiency of transparent conductive (Mg,Zn)O thin films has been investigated in dependence on growth and annealing parameters. For this purpose, the samples have been prepared on glass substrates at RT, 200 ^∘C, and 300 ^∘C by pulsed-laser deposition (PLD) using a continuous composition spread method (CCS) [1, 2]. Further, post-annealing was performed at 400 ^∘C in vacuum in order to analyze the stability of the films. It has been found that growth and annealing conditions have an impact on structural, electrical, and optical properties of the films. With increasing growth temperature, crystallographic quality of the films improved. However, at high temperature, i.e. after post-annealing at 400 ^∘C, the free charge carrier density saturated and optical bandgap decreased. That can be explained by self-compensation of free charge carriers by intrinsic defects [2, 3].

[1] H. von Wenckstern et al., CrystEngComm 15, 10020 (2013).

[2] A. Mavlonov et al., PSS-A 2015, DOI:10.1002/pssa.201431932.

[3] A. Zakutayev et al., APL 103, 212306 (2013).