Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 27: Zinc Oxide and Zinc Selenide

HL 27.2: Vortrag

Dienstag, 8. März 2016, 09:45–10:00, H17

Hybrid top gate transistors based on solution processed Zinc Tin Oxide and organic dielectrics — •Benedikt Sykora and Heinz von Seggern — TU Darmstadt, Materialwissenschaften, Elektronische Materialeigenschaften, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany

Metal oxide semiconductors like Zinc Tin Oxide (ZTO) are extensively studied because of their solution processability, transparency and cost efficiency. Transistors with top contact configuration are widely reported in literature. Top gate transistors on the contrary have several advantages e.g. protection of semiconducting layer, switching speed.

Here we present hybrid inorganic-organic top-gate transistors based on solution processed ZTO and organic dielectrics. An ethanol based precursor solution route for ZTO was developed that is environmental friendly, cost efficient, simple to process and long term stable. Thin films are investigated by TEM, SEM, XPS, XRD and absorption measurements. Transparent, top gate transistors exhibiting electron mobility values of up to 2.8 cm²/(Vs) and high on/off ratios exceeding 10⁶ were realized.