Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 27: Zinc Oxide and Zinc Selenide

HL 27.3: Vortrag

Dienstag, 8. März 2016, 10:00–10:15, H17

CMOS-compatible PLD-growth of ultrathin ZnO nanowires — •Alexander Shkurmanov, Chris Sturm, Holger Hochmuth, and Marius Grundmann — Universität Leipzig, Inst. for Exp. Phys. II, Linnéstr. 5, 04103 Leipzig, Germany

An interesting feature of ZnO is self-organized growth of micro- and nanowires (NWs) with high crystalline quality. Comparing to microwires, quantum confinement effects appear in NWs with diameter less than 10 nm. This makes them interesting for quantum effects researches such as topological quibits [1].

Here we present the growth of an array of well oriented ZnO NWs by pulsed laser deposition (PLD). For the NWs growth we used ZnO seed layers which are doped with Al or rather Ga. In dependence on the concentration of these metals in the seed layer we were able to change the diameter of these wires, by two orders of magnitude, i.e from d ≥ 550 nm down to 10nm. The aspect ratio for all wires is typically 70. Beside the shape of the wire, the seed layer has also an impact on the optimum growth temperature of the NWs which can be reduced down to 400^∘C, making them compatible with CMOS technology.

[1] S. Nadj-Perge, et al, Nature 468 (7327),1084, 2010.