Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 27: Zinc Oxide and Zinc Selenide

HL 27.6: Vortrag

Dienstag, 8. März 2016, 10:45–11:00, H17

Optimization of seed layer thickness to grow ZnO nanowires for hybrid solar cell applications — •Emily Tansey¹, Alejandra Castro-Carranza¹, Stephanie Bley¹, Jairo C. Nolasco², Tobias Voss³, and Jürgen Gutowski¹ — ¹Institute of Solid State Physics, Semiconductor Optics, University of Bremen, 28359 Bremen — ²Energy and Semiconductor Research Laboratory, Carl von Ossietzky University of Oldenburg, 26129 Oldenburg — ³Institute of Semiconductor Technology, TU Braunschweig University of Technology, 38092 Braunschweig

An interesting application of ZnO nanowires is the formation of hybrid junctions with other materials, e.g. polymers, to create solar cells. Wet chemical growth of ZnO nanowires is a low-cost method that implements zinc acetate hexahydrate in solution as a seed layer to form ordered nanostructures on metal oxide substrates. The current-voltage characteristics of this junction, however, show the formation of an unwanted potential barrier at the interface between the ordered nanowires and bottom oxide electrode, which must be considered to get efficient cells. To better understand the impact of the seed layer on this junction, its thickness is modified. Our results indicate that a thicker seed layer yields a higher potential barrier formed at the ZnO nanowires-metal interface. An optimal seed layer thickness for solar cell applications is proposed accordingly.