Regensburg 2016 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 27: Zinc Oxide and Zinc Selenide

HL 27.8: Vortrag

Dienstag, 8. März 2016, 11:45–12:00, H17

Schottky barrier diodes on amorphous zinc tin oxide — •Peter Schlupp, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Leipzig, Germany

Amorphous zinc tin oxide (ZTO) can be fabricated at room temperature and exhibits electron mobilities of more than 10 cm²V⁻¹s⁻¹ [1]. This makes its use interesting for channel layers in pixel driving thin film transistors for active matrix displays. Schottky barrier diodes acting as gate are a viable option. They can additionally be employed for material characterization by space charge spectroscopy.

We present Schottky barrier diodes on ZTO using platinum contacts. The semiconducting films are grown by pulsed laser deposition, the Schottky contacts by reactive direct current sputtering. Diodes exhibit rectification ratios of more than 5 orders of magnitude. Temperature dependent current voltage characteristics were obtained and modelled using thermionic emission model. Additionally, capacitance-voltage and thermal admittance spectroscopy were performed. We found two defect levels in a-ZTO, one deep level at about 200 meV and one shallow level near the conduction band minimum who’s properties are discussed following the method of Pautrat et al. [2].

[1] Jayaraj et al., J. Vac. Sci. Technol. B 26, 495 (2008)

[2] Pautrat et al., Solid-State Electron. 23, 1159 (1980)