Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 31: Silicon-based Semiconductors I
HL 31.3: Vortrag
Dienstag, 8. März 2016, 12:45–13:00, H14
Lattice location of Se in hyperdoped Si — •Fang Liu1,2, Slawomir Prucnal1, Kun Gao1,2, René Heller1, Lars Rebohle1, Wolfgang Skorupa1, Manfred Helm1,2, and Shengqiang Zhou1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany — 2Technische Universität Dresden, Dresden, Germany
Se implanted Si wafers with very high doping concentrations exceeding the solid solubility limit have been formed by ion implantation and subsequently by flash lamp annealing. Rutherford backscattering spectrometry/channeling and Raman scattering have been used to determine the recrystallization and lattice location of Se in implanted Si layers after flash lamp annealing. It is found that the crystal order of the implanted sample can be recovered with a high quality after optimal annealing [1]. In order to study the incorporation site of Se, angular maps across planes {100} and {110} were carried out. Prominent channeling effects are observed, which is strong evidence that most of Se atoms are located on substitutional lattice sites. The detailed angular scans along [001] and [110] reveal a small displacement of Se impurities from the substitutional lattice sites.
[1] S. Zhou, F. Liu, S. Prucnal, K. Gao, M. Khalid, W. Skorupa and M. Helm, Scientific Report 5, 8329 (2015).